AUIRF9952Q Datasheet PDF - International Rectifier
Part Number | AUIRF9952Q | |
Description | Power MOSFET ( Transistor ) | |
Manufacturers | International Rectifier | |
Logo | ||
There is a preview and AUIRF9952Q download ( pdf file ) link at the bottom of this page. Total 13 Pages |
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PD - 97647
AUIRF9952Q
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Full Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
V7 D1
(BR)DSS
S2 3
G2 4
6
5
D2
D2
RDS(on) max.
P-CHANNEL MOSFET
Top View
ID
N-CH P-CH
30V -30V
0.10Ω 0.25Ω
3.5A -2.3A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF9952Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
dPeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient (PCB Mount, steady state)
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
16 -10
2.0
1.3
0.016
± 20
44 57
2.0 -1.3
0.25
5.0 -5.0
-55 to + 150
Typ.
–––
Max.
62.5
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashe0e4t/h2t5t/p1:/1/www.datasheet4u.com/
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N-Channel
AUIRF9952Q
2.0 ID = 2.2A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
0.12
0.10 VGS = 4.5V
0.08
VGS = 10V
0.06
0.04
0
2 4 6 8 10
ID, Drain Current (A)
A
12
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
I D = 3.5A
3 6 9 12
VGS , Gate-to-Source Voltage (V)
A
15
100 ID
TOP
0.89A
1.6A
80 BOTTOM 2.0A
60
40
20
0
25 50 75 100 125
Starting TJ, Junction Temperature (°C)
A
150
Fig 7. Typical On-Resistance Vs. Gate
Voltage
www.irf.com
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
5
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Information | Total 13 Pages | |
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Part Number | Description | MFRS |
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