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15N60HS Datasheet PDF - Infineon

Part Number 15N60HS
Description High Speed IGBT
Manufacturers Infineon 
Logo Infineon Logo 

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15N60HS datasheet, circuit
SGB15N60HS
^
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
VCE
IC
Eoff
Tj
SGB15N60HS
600V 15A 200µJ 150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature (reflow soldering, MSL1)
Marking
Package
G15N60HS PG-TO-263-3-2
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj ,Tstg
Tj(tl)
-
Value
600
27
15
60
60
±20
±30
10
138
-55...+150
175
245
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.3 Oct 06
Free Datasheet http://www.datasheet4u.com/

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15N60HS equivalent
SGB15N60HS
^
40A VGE=20V
15V
13V
30A
11V
9V
20A 7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A VGE=20V
15V
13V
30A
11V
9V
20A 7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
TJ=-55°C
40A 25°C
150°C
20A
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
5,5V
5,0V
4,5V
IC=30A
4,0V
3,5V
3,0V
IC=15A
2,5V
2,0V
IC=7.5A
1,5V
1,0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev 2.3 Oct 06

5 Page
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Information Total 11 Pages
Download[ 15N60HS.PDF Datasheet ]

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Part NumberDescriptionManufacturers
15N60HSThe function is High Speed IGBT.Infineon
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