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PDF FGPF4536 Data sheet ( Hoja de datos )
| Número de pieza | FGPF4536 | |
| Descripción | 360V PDP Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGPF4536
360 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• PDP TV, Consumer appliances, Lighting
November 2013
General Description
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low con-
duction and switching losses are essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RJC(IGBT)
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1 sec
* Ic_pluse limited by max Tj
Ratings
360
30
220
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Unit
V
V
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
100
Figure 14. Turn-off Characteristics vs.
Collector Current
400
tr
10
1
10
td(on)
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
20 30 40
Collector Current, IC [A]
50
tf
100
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
10
10
20
30
td(off)
40
Collector Current, IC [A]
50
Figure 15. Switching Loss vs. Gate Resistance
5000
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eoff
100
Eon
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 16. Switching Loss vs. Collector Current
1000
100
10
1
10
Eoff
Eon
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
20 30 40
Collector Current, IC [A]
50
Figure 17. Turn off Switching SOA Characteristics
500
100
10
1
Safe Operating Area
VGE = 15V, TC = 125oC
0.1
1
10 100
Collector-Emitter Voltage, VCE [V]
500
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGPF4536.PDF ] | |
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