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Datasheet 2SA1012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1012 | PNP Silicon Epitaxial Planar Transistor 2SA1012
PNP Silicon Epitaxial Planar Transistor
for high current switching applications.
The transistor is subdivided into two group, O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Coll |  SEMTECH | transistor |
| 2 | 2SA1012 | Silicon PNP transistor 2SA1012
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.
特征 / Features
饱和压降低,开关速度快,与 2SC2562 互补。 Low collector saturation voltage, high speed switching time, complem |  BLUE ROCKET ELECTRONICS | transistor |
| 3 | 2SA1012 | PNP Plastic-Encapsulate Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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2SA1012
Features
• Capable of 25 Watts of Power Dissipation.
• Collector-current -5.0A and Collector-base Voltage -60V • Operating and sto |  MCC | transistor |
| 4 | 2SA1012 | PNP Transistor 2SA1012(PNP)
TO-220 Transistor
1. BASE 2. COLLECTOTR 3. EMITTER
TO-220
Features
3 2 1
HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage
: VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (T |  LGE | transistor |
| 5 | 2SA1012 | PNP Plastic-Encapsulate Transistors 2SA1012
Plastic-Encapsulate Transistors (PNP)
Features • High Current Switching Applications. • Low Collector Saturation Voltage • High Speed Swithing Time • RoHS compliant package Applications • High speed switching Packing & Order Information 3,000/Reel
Graphic symbol
MAXIMUM RATINGS AN |  Bruckewell | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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