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PDF AP04N60I Data sheet ( Hoja de datos )

Número de pieza AP04N60I
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP04N60I Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP04N60I
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
Description
G
D
S
BVDSS
RDS(ON)
ID
600V
2.35Ω
4A
AP04N60 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage
surge and sag in the toughest power system with the best combination
of fast switching, ruggedized design and cost-effectiveness.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
http://www.DataSheet4U.net/
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
IAR Avalanche Current
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
600
+30
4
2.2
15
36.8
8
4
-55 to 150
-55 to 150
Value
3.4
65
Units
V
V
A
A
A
W
mJ
A
Units
/W
/W
Data & specifications subject to change without notice
1
200902231
datasheet pdf - http://www.DataSheet4U.net/

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