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What is AUIRFB3207?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "HEXFET Power MOSFET".


AUIRFB3207 Datasheet PDF - International Rectifier

Part Number AUIRFB3207
Description HEXFET Power MOSFET
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D
G
S
G
Gate
PD - 96322
AUIRFB3207
HEXFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
75V
3.6m
4.5m
c170A
75A
GDS
TO-220AB
AUIRFB3207
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
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ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dV/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally limited)
ÃdAvalanche Current
Repetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
170™
120™
75
720
300
2.0
± 20
910
See Fig. 14, 15, 16a, 16b,
5.8
-55 to + 175
300
x x10lb in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/21/10datasheet pdf - http://www.DataSheet4U.net/

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AUIRFB3207 equivalent
1000.0
100.0 TJ = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
Limited By Package
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
80
10000
1000
AUIRFB3207
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100µsec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
DC
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
100
90
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80
70
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
4000
3000
ID
TOP
12A
16A
BOTTOM 75A
2000
1000
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
datasheet pdf - http://www.DataSheet4U.net/


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AUIRFB3207 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
AUIRFB3207The function is HEXFET Power MOSFET. International RectifierInternational Rectifier

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