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Número de pieza | AOI482 | |
Descripción | 100V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOI482 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOD482/AOI482
100V N-Channel MOSFET
General Description
The AOD482/AOI482 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
100V
32A
< 37mΩ
< 42mΩ
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
DD
DS
G
DG
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
http://www.DataSheet4U.net/
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IDSM
IAS, IAR
EAS, EAR
PD
PDSM
TJ, TSTG
100
±20
32
22
70
5
4
35
61
100
50
2.5
1.6
-55 to 175
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
39
0.8
Max
20
50
1.5
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2 : July 2011
www.aosmd.com
Page 1 of 6
datasheet pdf - http://www.DataSheet4U.net/
1 page AOD482/AOI482
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=150°C
TA=100°C
120
100
80
10
TA=125°C
60
40
20
1
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
40 10000
TA=25°C
30 1000
17
100 5
20
2
10
10
10
1
0
0.00001 0.001
0.1
10 1000
0 25 50 75 100 125 150 175 http://www.DataSheet4U.net/
0
TCASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 2 : July 2011
www.aosmd.com
Page 5 of 6
datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOI482.PDF ] |
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