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PDF IR11682S Data sheet ( Hoja de datos )
| Número de pieza | IR11682S | |
| Descripción | DUAL SMART RECTIFIER DRIVER IC | |
| Fabricantes | International Rectifier | |
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Datasheet No – 97476
March 24, 2010
IR11682S
DUAL SMART RECTIFIER DRIVER IC
Features
Product Summary
• Secondary-side high speed controller for
synchronous rectification in resonant half bridge
Topology
topologies
VD
• 200V proprietary IC technology
• Max 400KHz switching frequency
VOUT
• Anti-bounce logic and UVLO protection
• 4A peak turn off drive current
Io+ & I o- (typical)
• Micropower start-up & ultra low quiescent current
Turn on Propagation Delay
• 10.7V gate drive clamp
• 80ns turn-off propagation delay
Turn off Propagation Delay
• Wide Vcc operating range
• Direct sensing for both Synchronous Rectifiers
Package Options
• Cycle by Cycle MOT Check Circuit prevents multiple
false trigger GATE pulses
• Minimal component count
• Simple design
• Lead-free
LLC Half-bridge
200V
10.7V Clamped
+1A & -4A
100ns (typical)
80ns (typical)
Typical Applications
• LCD & PDP TV, Telecom SMPS, AC-DC adapters
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8-Lead SOIC
Typical Connection Diagram
Vin
C1 M1
Lr
12
C2 M2
SR1
Cdc
Rg1
1 GATE1 GATE2 8
2 VCC
GND 7
3 VS1
VS2 6
4 VD1
VD2 5
IR1I1R1618682
Rg2
Cout
LOAD
Rtn SR2
*Please note that this datasheet contains advance information that could change before the product is
released to production.
www.irf.com
© 2010 International Rectifier
datasheet pdf - http://www.DataSheet4U.net/
1 page  
IR11682S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameters
Supply Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
VCC
VD
VD
VS
VGATE
TJ
TS
RθJA
PD
fsw
Min.
-0.3
-1
-5
-3
-0.3
-40
-55
Max.
20
200
200
20
20
150
150
128
970
400
Units
V
V
V
V
V
°C
°C
°C/W
mW
kHz
Remarks
VCC=20V, Gate off
SOIC-8
SOIC-8, TAMB=25°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VCC
VD1, VD2
TJ
Fsw
Definition
Supply voltage
Drain Sense Voltage
Junction Temperature
Switching Frequency
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Min.
8.6
-3 †
-25
---
Max.
18
200
125
400
† VD1, VD2 -3V negative spike width ≤100ns
Units
V
°C
kHz
www.irf.com
© 2010 International Rectifier
5
datasheet pdf - http://www.DataSheet4U.net/
5 Page 
IR11682S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to
turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as
close as possible to the IR11682. This pin is not internally clamped.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are
referenced to this point.
VD1 and VD2: Drain Voltage Sense
These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs.
Routing between the drain of the MOSFET and the IC pin must be particularly optimized.
Additional RC filter in not necessary but could be added to VD1 and VD2 pins to increase noise immunity.
For applications which VD voltage exceeds 100V, a 1Kohm to 2Kohm VD resistor is recommended to be
added between the drain of SR MOSFET and VD pin. The VD resistor helps to limit the switching loss of VD
pins.
VS1 and VS2: Source Voltage Sense
These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin
must not be connected directly to the GND pin (pin 7) but must be used to create a Kelvin contact as close as
possible to the power MOSFET source pin.
GATE1 and GATE2: Gate Drive Outputs
These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A
peak drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET
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gate, the use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care
must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal
switching performance.
www.irf.com
11
© 2010 International Rectifier
datasheet pdf - http://www.DataSheet4U.net/
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