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PDF FJ330301 Data sheet ( Hoja de datos )
| Número de pieza | FJ330301 | |
| Descripción | Silicon P-channel MOS FET | |
| Fabricantes | Panasonic | |
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This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
Silicon P-channel MOS FET
For switching circuits
Overview
FJ330301 is P-channel small signal MOS FET employed small size surface
mounting package.
Features
Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V)
High-speed switching
Small size surface mounting package: SSSMini3-F2-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
Drain current
ID
Peak drain current
IDP
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
Rating Unit
-30 V
±12 V
-100
-200
mA
http://www.DataSheet4U.net/
mA
100 mW
150 °C
–55 to +150 °C
Package
Code
SSSMini3-F2-B
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbol: U1
Internal Connection
(D)
3
12
(G) (S)
Publication date: January 2011
Ver. CED
1
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1 page  
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