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2N1595 PDF Datasheet - (2N1595 - 2N1599) SILICON THYRISTOR - Comset Semiconductors

Part Number 2N1595
Description (2N1595 - 2N1599) SILICON THYRISTOR
Manufacturers Comset Semiconductors 
Logo Comset Semiconductors Logo 
Preview
Preview ( 3 pages )
		
2N1595 datasheet, circuit
2N1595 – 2N1596 – 2N1597 – 2N1598 – 2N1599
SILICON THYRISTORS
Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for
printed-circuit applications
Current handling capability of 1.6 amperes at junction temperetures to 125°C.
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted
Symbol
Ratings
2N1595 2N1596 2N1597 2N1598 2N1599 Unit
VRSM(REP)
IT(RMS)
ITSM
PGM
PG(AV)
IGM
VGFM
VGRM
TJ
TSTG
Peak reverse blocking voltage (*)
Forward Current RMS
(all conduction angles)
Peak Surge Current
(One Cycle, 60Hz, TJ=-65 to+125°C)
Peak Gate Power – Forward
Average Gate Power - Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
Operating Junction Temperature
Range
Storage Temperature Range
50
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100 200 300
1.6
15
0.1
0.01
0.1
10
10
-65 to +125
-65 to +150
400 V
A
A
W
W
A
V
V
°C
12/11/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/

1 page

2N1595 pdf, schematic
2N1595 – 2N1596 – 2N1597 – 2N1598 – 2N1599
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000
Symbol
Ratings
2N1595 2N1596 2N1597 2N1598 2N1599 Unit
VDRM
IRRM
IDRM
IGT
VGT
IH
VTM
tgt
tq
Peak Forward Blocking
Voltage *
Min :
Peak Reverse Blocking Current
(Rated VDRM, TJ =125°C)
Peak Forward Blocking Current
(Rated VDRM with gate open ,
TJ =125°C)
Gate Trigger Current
Anode Voltage=7.0 Vdc, RL=12
Gate Trigger Voltage
Anode Voltage=7.0 Vdc, RL=12
VDRM = Rated, RL=100,
TJ=125°C
Holding Current
Anode Voltage=7.0 Vdc, gate
open
Forward On Voltage
IT=1 Adc
Turn-On Time (td+tr)
IGT=10 mA, IT=1 A
Turn-Off Time
IT=1 A, IR =1 A, dv/dt=20 V/µs,
TJ=125°C
VDRM = Rated Voltage
50
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100 200 300
Max 1
Max 1
Typ : 2.0, Max : 10
Typ : 0.7, Max : 3.0
Min : 0.2
Typ : 5.0
Typ : 1.1, Max : 2.0
Typ : 0.8
Typ : 10
400 V
mA
mA
mA
V
mA
V
µs
µs
(*) VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
12/11/2012
COMSET SEMICONDUCTORS
2|3
datasheet pdf - http://www.DataSheet4U.net/

2 Page





Information Total 3 Pages
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