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Datasheet 2N6040 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N6040 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, de | Central Semiconductor | transistor |
2 | 2N6040 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type 2N6043
| Inchange Semiconductor | transistor |
3 | 2N6040 | POWER TRANSISTORS(10A/80W) A
A
A
A
| Mospec Semiconductor | transistor |
4 | 2N6040 | COMPLEMENTARY SILICON POWER TRANSISTORS PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
Plastic Medium-Power Complementary Silicon Transistors
Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC | ON Semiconductor | transistor |
5 | 2N6040 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Boca Semiconductor Corporation | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact Unisonic Technologies mosfet | | |
2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge ON Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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