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RJP1CS04DWT Datasheet PDF - Renesas

Part Number RJP1CS04DWT
Description IGBT
Manufacturers Renesas 
Logo Renesas Logo 



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RJP1CS04DWT datasheet, circuit
Preliminary Datasheet
RJP1CS04DWT/RJP1CS04DWA
1250V - 50A - IGBT
Application: Inverter
R07DS0827EJ0004
Rev.0.04
Jun 05, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS04DWT-80
3
1
3
Wafer: RJP1CS04DWA-80
2
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Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
VCES
VGES
IC Note1
IC Note1
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
1250
±30
100
50
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0827EJ0004 Rev.0.04
Jun 05, 2012
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