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RJP1CS03DWT Datasheet PDF - Renesas

Part Number RJP1CS03DWT
Description IGBT
Manufacturers Renesas 
Logo Renesas Logo 



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RJP1CS03DWT datasheet, circuit
Preliminary Datasheet
RJP1CS03DWT/RJP1CS03DWA
1250V - 30A - IGBT
Application: Inverter
R07DS0826EJ0001
Rev.0.01
Jul 03, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
2
C
1G
Die: RJP1CS03DWT-80
3
1
Wafer: RJP1CS03DWA-80
2
E
1. Gate
3
2. Collector (The back)
3. Emitter
3
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Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
VCES
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
VGES
IC Note1
IC Note1
Junction temperature
Tj
Notes: 1. This data is a regulated value in evaluation package.
Ratings
1250
±30
60
30
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0826EJ0001 Rev.0.01
Jul 05, 2012
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