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RJH30H2DPK-M0 Datasheet PDF - Renesas

Part Number RJH30H2DPK-M0
Description High Speed Power Switching
Manufacturers Renesas 
Logo Renesas Logo 

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RJH30H2DPK-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tr = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
12 3
G
Preliminary Datasheet
R07DS0464EJ0200
Rev.2.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector to emitter diode Forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
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Symbol
VCES
VGES
Ic
ic(peak) Note1
iDF(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
35
250
100
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/

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RJH30H2DPK-M0 equivalent
RJH30H2DPK-M0
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current
100
Pulse Test
Ta = 25°C
80
60
40
20
0
01234
Collector to Emitter Diode
Forward Voltage VECF (V)
5
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03 0.01
0.01
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PDM
1 m 10 m
Pulse Width PW (s)
D=
PW
T
PW
T
100 m
1
Preliminary
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
toff
10%
tf
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/


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Part NumberDescriptionManufacturers
RJH30H2DPK-M0The function is High Speed Power Switching.Renesas
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