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RJH30H1DPP-M0 Datasheet PDF - Renesas

Part Number RJH30H1DPP-M0
Description High Speed Power Switching
Manufacturers Renesas 
Logo Renesas Logo 

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RJH30H1DPP-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr =80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
Low leak current: ICES = 1 A max.
Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
Isolated package: TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0463EJ0200
Rev.2.00
Jun 15, 2011
C
1
23
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode Forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
1. Gate
2. Collector
G 3. Emitter
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E
Symbol
VCES
VGES
IC
ic(peak) Note1
iDF(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
100
20
6.25
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/

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RJH30H1DPP-M0 equivalent
RJH30H1DPP-M0
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current
100
Pulse Test
Ta = 25°C
80
60
40
20
0
01234
Collector to Emitter Diode
Forward Voltage VECF (V)
5
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
3
D=1
1
0.5
0.3 0.2
0.1
0.1 0.05
0.03 0.02
0.011shot pulse
0.01
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PDM
PW
T
1m
10 m
100 m
Pulse Width PW (s)
D=
PW
T
1 10
Preliminary
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
10%
tf
toff
R07DS0463EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/


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Part NumberDescriptionManufacturers
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