RD70HVF1 Datasheet PDF - Mitsubishi
| Part Number | RD70HVF1 | |
| Description | Silicon MOSFET Power Transistor | |
| Manufacturers | Mitsubishi | |
| Logo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
1
3
5.0+/-0.3
18.5+/-0.3
4-C2
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
RoHS COMPLIANT
RD70HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS
VGSS
Drain to source voltage
Gate to source voltage
Vgs=0V
Vds=0V
www.DataSheet.net/
30
+/-20
V
V
Pch Channel dissipation
Tc=25°C
150 W
Pin Input power
Zg=Zl=50Ω
10(Note2) W
ID Drain current
- 20 A
Tch Channel temperature
-
175 °C
Tstg Storage temperature
- -40 to +175 °C
Rth j-c Thermal resistance
junction to case
1.0 °C/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 20W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 300 uA
IGSS Gate to source leak current VGS=10V, VDS=0V
- - 5 uA
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.3 1.8 2.3
V
Pout Output power
f=175MHz ,VDD=12.5V
70 75
-
W
ηD Drain efficiency
Pin=6W, Idq=2.0A
55 60
-
%
Pout Output power
f=520MHz ,VDD=12.5V
50 55
-
W
ηD Drain efficiency
Pin=10W, Idq=2.0A
50 55
-
%
Load VSWR tolerance
VDD=15.2V,Po=70W(PinControl)
f=175MHz,Idq=2.0A,Zg=50Ω
LoadVSWR=20:1(All phase)
No destroy
-
Load VSWR tolerance
VDD=15.2V,Po=50W(PinControl)
f=520MHz,Idq=2.0A,Zg=50Ω
Load VSWR=20:1(All phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TEST CIRCUIT(f=520MHz)
Vgg Vdd
RF-IN
8.2kOHM
C1
9.1kOHM
L3
15pF
100OHM
L1
15pF
520MHz
RD70HVF1
L2
C3
C2
56pF
22pF
15pF 5pF 0-10pF 5pF
12
40
45
70
80
100
15pF 15pF
8
18
38
www.DataSheet.net/
5pF
88
100
56pF
RF-OUT
0-10pF
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:2Turns,I.D6mm,D1.6mm P=2 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD70HVF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/
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