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PDF AM2328NE Data sheet ( Hoja de datos )
| Número de pieza | AM2328NE | |
| Descripción | N-Channel 20V (D-S) MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM2328NE
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
20 0.018 @ VGS = 4.5 V
0.021 @ VGS = 2.5V
ID (A)
7.0
6.5
SOT-23
D
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
Top View
G
G
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
S
ESD Protected
D
S
N-Channel
MOSFET
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
www.DataSheet.co.kr
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
TJ, Tstg
20
±8
7.0
5.7
±20
1.6
1.3
0.9
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol Maximum Units
RT HJA
100 oC/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM2328NE_B
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM2328NE.PDF ] | |
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