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What is RJP30H2DPK-M0?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "N-Channel Power MOSFET / Transistor".


RJP30H2DPK-M0 Datasheet PDF - Renesas

Part Number RJP30H2DPK-M0
Description N-Channel Power MOSFET / Transistor
Manufacturers Renesas 
Logo Renesas Logo 


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RJP30H2DPK-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tf = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
1
23
G
Preliminary Datasheet
R07DS0467EJ0200
Rev.2.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
35
250
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/

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RJP30H2DPK-M0 equivalent
RJP30H2DPK-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03 0.01
0.01
10 μ
100 μ
θjc(t) = γs (t) θjc
θjc = 2.08°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
Ic
www.DataSheet.co.kr
td(on)
10%
tr
ton
td(off)
toff
10%
tf
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/


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RJP30H2DPK-M0 datasheet


1. 360V N-ch IGBT - Renesas

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Featured Datasheets

Part NumberDescriptionMFRS
RJP30H2DPK-M0The function is N-Channel Power MOSFET / Transistor. RenesasRenesas

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