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Número de pieza | RJP30E2DPK-M0 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJP30E2DPK-M0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJP30E2DPK-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
• Trench gate technology (G5H series)
• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
• High speed switching tf = 150 ns typ
• Low leak current ICES = 1 μA max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
1
23
G
Preliminary Datasheet
R07DS0348EJ0100
Rev.1.00
Apr 12, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tc = 25°C
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Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
θj-c
Tj
Tstg
Ratings
360
±30
35
200
50
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page RJP30E2DPK-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
3
D=1
1
0.5
0.3 0.2
0.1
0.03
0.01
0.1
0.05
0.02
0.01
1shot
pulse
0.003
0.001
Tc = 25°C
PDM
PW
T
1m
10 m
100 m
Pulse Width PW (s)
D=
PW
T
1 10
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
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Ic
td(on)
90%
10%
tr
ton
td(off)
90%
10%
tf
toff
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJP30E2DPK-M0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJP30E2DPK-M0 | N-Channel Power MOSFET / Transistor | Renesas |
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