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PDF K3116 Data sheet ( Hoja de datos )
| Número de pieza | K3116 | |
| Descripción | MOSFET ( Transistor ) - 2SK3116 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)
•Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK3116
2SK3116-S
2SK3116-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
www.DataSheet.co.kr
Drain to Source Voltage (VGS = 0 V) VDSS
600 V
Gate to Source Voltage (VDS = 0 V) VGSS
±30 V
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±7.5 A
±30 A
Total Power Dissipation (TA = 25°C) PT1
1.5 W
Total Power Dissipation (TC = 25°C) PT2
70 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Diode Recovery dv/dt Note3
Tstg
IAS
EAS
dv/dt
−55 to +150
7.5
37.5
3.5
°C
A
mJ
V/ns
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V
3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1998
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
2SK3116
5 DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
5 TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
70
80
60
60 50
40
40 30
20
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
10 RDS(on) LimiteIDd(DC)
PW
100 µs = 10 µs
1 ms
1 Power DissipatiDo1n0C30L0mim1ms0sit3memsds
TC = 25˚C
Single Pulse
0.1
1 10
100 1000
VDS - Drain to Source Voltage - V
www.DataSheet.co.kr
5 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
10 µ 100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 1.79˚C/W
10 100 1000
Data Sheet D13339EJ2V0DS
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3116.PDF ] | |
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