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PDF SM9435K Data sheet ( Hoja de datos )

Número de pieza SM9435K
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Sinopower Semiconductor 
Logotipo Sinopower Semiconductor Logotipo



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No Preview Available ! SM9435K Hoja de datos, Descripción, Manual

SM9435K
P-Channel Enhancement Mode MOSFET
Features
-30V/-4.6A ,
RDS(ON)=52m(typ.) @ VGS=-10V
RDS(ON)=80m(typ.) @ VGS=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
S
S
S
G
D
D
D
D
Top View of SOP 8
( 1, 2, 3 )
S SS
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(4)
G
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D D DD
(5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information
SM9435
Assembly Material
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G: Halogen and Lead Free Device
SM9435 K :
SM9435
XXXXX
XXXXX - Date Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - Sept., 2008
1
www.sinopowersemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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SM9435K pdf
SM9435K
Typical Characteristics (Cont.)
Output Characteristics
20
18
V = -5, -6, -7, -8, -9, -10V
GS
16 -4V
14
12
10
8
6 -3V
4
2
0
012345678
-VDS - Drain - Source Voltage (V)
Transfer Characteristics
20
18
16
14
12
10
8 T =125oC
j
6
T =25oC
4j
T =-55oC
j
2
0
012345
-VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
140
130
120
110
V = -4.5V
100 GS
90
80
70
60
V = -10V
GS
50
40
30
20
0 2 4 6 8 10 12 14 16 18 20
-ID - Drain Current (A)
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Gate Threshold Voltage
1.6
I
DS
=
-250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - Sept., 2008
5
www.sinopowersemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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