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PDF AP07N70CF Data sheet ( Hoja de datos )
| Número de pieza | AP07N70CF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP07N70CF/I
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
G
S
Description
AP07N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220FM & TO-220CFM type provide high blocking voltage to
overcome voltage surge and sag in the toughest power system with the
best combination of fast switching,ruggedized design and cost-
effectiveness.
BVDSS
RDS(ON)
ID
600/675V
1.2Ω
7A
G
DS
TO-220FM(F)
The TO-220FM & TO-220CFM package is universally preferred for all
commercial-industrial applications. The device is suited for switch mode
power supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
- /A
G
DS
Rating
600/675
± 30
7
4.4
18
37
0.3
140
7
7
-55 to 150
-55 to 150
TO-220CFM(I)
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.4
65
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218033
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
AP07N70CF/I
16
14 I D =7A
12 V DS =320V
V DS =400V
10
V DS =480V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
Ciss
Coss
100
Crss
1
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet AP07N70CF.PDF ] | |
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