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PDF 2SC3383 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3383 | |
| Descripción | PNP/NPN Epitaxial Planar Silicon Transistors | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number:EN1943A
Features
· Adoption of FBET process.
· AF amp.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1392/2SC3383
AF Amp Applications
Package Dimensions
unit:mm
2003A
[2SA1392/2SC3383]
( ) : 2SA1392
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
JEDEC : TO-92
EIAJ : SC-43
SANYO : NF
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)0.1mA
VCE=(–)6V, IC=(–)10mA
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
VCE(sat)
VBE(sat)
Cob
IC=(–)100mA, IB=(–)10mA
IC=(–)100mA, IB=(–)10mA
VCB=(–)6V, f=1MHz
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
* : The 2SA1392/2SC3383 are classified by 1mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
B : Base
C : Collector
E : Emitter
Ratings
(–)60
(–)50
(–)6
(–)200
(–)400
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
100*
70
250
(200)
(–)60
(–)50
(–)6
2.7
(3.7)
max
(–)0.1
(–)0.1
560*
(–)0.3
(–)1.0
Unit
µA
µA
MHz
MHz
V
V
pF
pF
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4277TA, TS No.1943-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC3383.PDF ] | |
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