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PDF 2SC3355 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3355 | |
| Descripción | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
0.5
(0.02)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
600
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 50 120
Gain Bandwidth Product
fT
6.5
Output Capacitance
Insertion Power Gain
Cob
S21e2
0.65
9.5
Noise Figure
NF 1.1
Noise Figure
NF 1.8
hFE Classification
Class
K
Marking
K
hFE 50 to 300
MAX.
1.0
1.0
300
1.0
3.0
1.27
(0.05)
2.54
(0.1)
123
1. Base
EIAJ : SC-43B
2. Emitter JEDEC : TO-92
3. Collector IEC : PA33
UNIT
A
A
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
© 1985
1 page  
[MEMO]
2SC3355
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC3355.PDF ] | |
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