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W21NM60N Datasheet PDF - STMicroelectronics

Part Number W21NM60N
Description STW21NM60N
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 

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STP/F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600V - 0.17- 17A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650V
650V
650V
650V
650V
< 0.22
< 0.22
< 0.22
< 0.22
< 0.22
17A
17A
17A(1)
17A
17A
1. Limited by wire bonding
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
April 2007
Marking
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Rev 6
Packaging
Tape & reel
Tube
Tube
Tube
Tube
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18
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W21NM60N equivalent
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STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17A, VGS = 0
ISD = 17A, VDD = 100V
di/dt=100A/µs
(see Figure 19)
ISD = 17A,VDD = 100V
di/dt=100A/µs,
Tj = 150°C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
17
68
0.91
372
4.6
25
A
A
V
ns
µC
A
486 ns
6.3 µC
26 A
5/18
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