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What is IPFH6N03LAG?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "Power-Transistor".


IPFH6N03LAG Datasheet PDF - Infineon Technologies

Part Number IPFH6N03LAG
Description Power-Transistor
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPDH6N03LA G IPFH6N03LA G
IPSH6N03LA G IPUH6N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
6 m
50 A
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package
Marking
PG-TO252-3-11
H6N03LA
PG-TO252-3-23
H6N03LA
PG-TO251-3-11
H6N03LA
PG-TO251-3-1
H6N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
150
6
±20
71
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2006-05-11
Datasheet pdf - http://www.DataSheet4U.net/

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IPFH6N03LAG equivalent
www.DataSheet.co.kr
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
90
10 V
4.5 V
80
70
60
50
40
30
20
10
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
IPDH6N03LA G IPFH6N03LA G
IPSH6N03LA G IPUH6N03LA G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
18 3.2 V
3.5 V
3.8 V
4.1 V
4.1 V
16
14
3.8 V
3.5 V
3.2 V
3V
2.8 V
3
12
10
8
6
4
2
0
0
4.5 V
10 V
20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
70
80
60
60 50
40
40
30
20
175 °C
25 °C
20
10
0
012345
V GS [V]
0
0 10 20 30 40 50 60
I D [A]
Rev. 1.3
page 5
2006-05-11
Datasheet pdf - http://www.DataSheet4U.net/


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IPFH6N03LAG datasheet


1. - 25V, 50A, MOSFET, Transistor

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Featured Datasheets

Part NumberDescriptionMFRS
IPFH6N03LAGThe function is Power-Transistor. Infineon TechnologiesInfineon Technologies

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