DataSheet.es    


PDF SVD8N60F Data sheet ( Hoja de datos )

Número de pieza SVD8N60F
Descripción 600V N-CHANNEL MOSFET
Fabricantes Silan Microelectronics 
Logotipo Silan Microelectronics Logotipo



Hay una vista previa y un enlace de descarga de SVD8N60F (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! SVD8N60F Hoja de datos, Descripción, Manual

www.DataSheet.co.kr
SVD8N60T/SVD8N60F
8A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
8A,600V,RDS(on) typ =0.96@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD8N60T
SVD8N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVD8N60T
SVD8N60F
Shipping
50Unit/Tube
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
EAR
TJ
Tstg
SVD8N60T
SVD8N60F
600
±30
8.0
28
147 48
1.18 0.38
530
14.2
-55 +150
-55 +150
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.net/

1 page




SVD8N60F pdf
www.DataSheet.co.kr
SVD8N60T/SVD8N60F
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
as DUT
VGS
50
12V 200nF
300nF
10V
VDS
Qg
Qgs Qgd
VGS
3mA DUT
Charge
VDS
VGS
RG
10V
Resistive Switching Test Circuit & Waveform
RL
VDD
DUT
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
VDD
DUT
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 5 of 7
Datasheet pdf - http://www.DataSheet4U.net/

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet SVD8N60F.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SVD8N60F600V N-CHANNEL MOSFETSilan Microelectronics
Silan Microelectronics
SVD8N60T600V N-CHANNEL MOSFETSilan Microelectronics
Silan Microelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar