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Número de pieza | 2SK2925S | |
Descripción | N-Channel Silicon MOSFET | |
Fabricantes | Guangdong Kexin Industrial | |
Logotipo | ||
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SMD Type
N-Channel Silicon MOSFET
2SK2925S
MOSFICET
Features
Low on-resistance
RDS =0.060 typ.
High speed switching
4V gate drive device can be driven from 5V source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
60
20
10
40
20
150
-55 to +150
Unit
V
V
A
A
W
Symbol
VDSS
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
ID=10mA,VGS=0
VDS=60V,VGS=0
VGS= 16V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5A
VGS=10V,ID=5A
VGS=4V,ID=5A
VDS=10V,VGS=0,f=1MHZ
ID=5A,VGS(on)=10V,RL=6
1 Gate
2 Drain
3 Source
Min Typ Max Unit
60 V
10 A
10 A
1.5 2.5 V
58
S
0.060 0.080
0.095 0.160
350 pF
190 pF
70 pF
10 ns
55 ns
60 ns
70 ns
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Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SK2925S.PDF ] |
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