SI5441DC Datasheet PDF - Vishay Siliconix
Part Number | SI5441DC | |
Description | P-Channel 2.5-V (G-S) MOSFET | |
Manufacturers | Vishay Siliconix | |
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Si5441DC
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.055 @ VGS = −4.5 V
−20 0.06 @ VGS = −3.6 V
0.083 @ VGS = −2.5 V
ID (A)
−5.3
−5.1
−4.3
Qg (Typ)
11
FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rated
Pb-free
Available
1206-8 ChipFETr
1
D
D
D
D
D
D
S
G
Bottom View
Marking Code
BA XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5441DC
Si5441DC-T1—E3 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −20
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
−5.3
−3.8
−2.1
2.5
1.3
−20
−55 to 150
260
−3.9
−2.8
−1.1
1.3
0.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
40
80
15
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71055
S-50366—Rev. C, 28-Feb-05
www.vishay.com
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SI5441DC electronic component. |
Information | Total 4 Pages | |
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