K2936 Datasheet PDF - Hitachi Semiconductor
Part Number | K2936 | |
Description | MOSFET ( Transistor ) - 2SK2936 | |
Manufacturers | Hitachi Semiconductor | |
Logo | ||
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2SK2936
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
ADE-208-559B (Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
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2SK2936
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2 I D = 20 A
10 A
0.1
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20 VGS = 4 V
10
10 V
5
2
1
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
I D = 20 A 10 A 5 A
24
V GS = 4 V
16
8
10 V
5, 10, 20 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 10 V
200 Pulse Test
100
50 Tc = –25 °C
20
10
5
2
1
0.5
0.1
25 °C
75 °C
0.3 1 3 10 30
Drain Current I D (A)
100
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K2936 electronic component. |
Information | Total 10 Pages | |
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