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SI2305CDS Datasheet PDF - Vishay Siliconix

Part Number SI2305CDS
Description P-Channel 8 V (D-S) MOSFET
Manufacturers Vishay Siliconix 
Logo Vishay Siliconix Logo 



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SI2305CDS datasheet, circuit
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P-Channel 8 V (D-S) MOSFET
Si2305CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = - 4.5 V
- 8 0.048 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)d
- 5.8
- 5.0
- 4.3
Qg (Typ.)
12 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2305CDS (N5)*
* Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converter
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
-8
±8
- 5.8
- 4.7
- 4.4a, b
- 3.5a, b
- 20
- 1.4
- 0.8a, b
1.7
1.1
0.96a, b
0.62a, b
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. TC = 25 °C.
t5s
Steady State
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Symbol
RthJA
RthJF
Typical
100
60
Maximum
130
75
Unit
°C/W
www.vishay.com
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SI2305CDS equivalent
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8 2.0
Si2305CDS
Vishay Siliconix
1.6
6
1.2
4
0.8
2
0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
www.vishay.com
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