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PDF MCH6660 Data sheet ( Hoja de datos )
| Número de pieza | MCH6660 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENA1993
MCH6660
SANYO Semiconductors
DATA SHEET
MCH6660
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch : RDS(on)1=105mΩ(typ.)
Pch : RDS(on)1=205mΩ(typ.)
• 1.8V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
N-channel P-channel
20 --20
±10 ±10
2 --1.5
8 --6
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0 t o 0.02
XM
1 23
0.65 0.3
TL
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Electrical Connection
65
4
1 23
http://semicon.sanyo.com/en/network
N0911PE TKIM TC-00002657 No. A1993-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
MCH6660
RDS(on) -- VGS
[Pch]
700
Ta=25°C
600
ID= --0.1A
500
--0.3A
400 --0.75A
300
200
RDS(on) -- Ta
[Pch]
700
600
500
400
300
200
VGS= --1.8V, ID= --0.1A
VVGGSS==---2-4.5.5VV, ,IDID==---0-.03.A75A
100
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
5
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT16648
[Pch]
VDS= --10V
3
2 25°C
1.0
7
Ta=
--25°C
75°C
5
3
2
0.1
7
--0.01
5
3
23
5 7 --0.1
2 3 5 7 --1.0
23
Drain
SW
Current,
Time
I-D-
-- A
ID
IT14618
[Pch]
VDD= --10V
VGS= --4.5V
2 td(off)
tf
10
tr
7
5 td(on)
100
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16649
IS -- VSD
[Pch]
5
3 VGS=0V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
3
2
100
7
5
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT14619
[Pch]
f=1MHz
Ciss
3 Coss
2 Crss
3
2
--0.1
2
--4.5
VDS= --10V
--4.0 ID= --1.5A
3 5 7 --1.0
Drain Current,
VGS --
IQDg--
A
23
IT14620
[Pch]
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg -- nC
IT14622
10
7
0 --2 --4 --6 --8 --10 --12 --14 --16
Drain-to-Source
A
Voltage,
SO
VDS
--
V
--10
7 IDP= --6A (PW≤10μs)
5
3
2 ID= --1.5A
10ms1ms 100μs
--1.0
7
5
3
2
Operation in
DC ope1r0a0timons
this area is
--0.1
7
limited by RDS(on).
5
--18 --20
IT14621
[Pch]
3
2
Ta=25°C
Single pulse
--0.01 When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT16650
No. A1993-5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCH6660.PDF ] | |
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