GB150TS60NPBF Datasheet PDF - Vishay Siliconix
Part Number | GB150TS60NPBF | |
Description | Ultrafast Speed IGBT | |
Manufacturers | Vishay Siliconix | |
Logo | ||
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GB150TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 150 A, 25 °C
600 V
138 A
2.64 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
UNITS
V
A
V
W
V
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
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www.DataSheet.co.kr
GB150TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 138 A
100
90 10 ohm
80
70
60 27 ohm
50
40
47 ohm
30
20
40 60 80 100 120 140 160
IF (A)
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
17
16
15
14
13
12
11
10
9
8
7
6
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
TJ = 125 °C, L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V
100 10
Ic = 150A
80
Ic = 100A
60 Ic = 75A
40
20
0 10 20 30 40 50
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 150 A
90
80
70
60
50
200 400 600 800 1000 1200 1400
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V
1
0 25 50 75 100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs. Junction Temperature;
L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V
8
7
6
5
4
3
2
1
0
0 40 80 120 160
IC (A)
Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current;
TJ = 125 °C, Rg1 = 10 Ω, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
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Information | Total 9 Pages | |
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