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PDF GB100DA60UP Data sheet ( Hoja de datos )
| Número de pieza | GB100DA60UP | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay Siliconix | |
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GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
SOT-227
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
IF DC
600 V
100 A at 61 °C
2.4 V
100 A at 85 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
VCES
IC
ICM
ILM
IF
IFM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
125
85
300
300
160
105
200
± 20
447
250
313
175
2500
UNITS
V
A
V
W
V
Document Number: 93001 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GB100DA60UP
Vishay Semiconductors
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
EOFF
EON
10 20 30 40 50
RG (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V
1000
tdON
tdOFF
tF
100
tR
10
0
10 20 30 40 50
RG (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
210
190
170
150
130
110
90
70
50
100
TJ = 125°C
TJ = 25°C
1000
dIF/dt (A/μs)
Fig. 13 - Typical trr diode vs. dIF/dt
VRR = 200 V, IF = 50 A
40
35
30
25
20
15
10
5
0
100
TJ = 125°C
TJ = 25°C
1000
dIF/dt (A/μs)
Fig. 14 - Typical Irr diode vs. dIF/dt
VRR = 200 V, IF = 50 A
0.0001
1E-005
0.0001
0.001
0.01
0.1
1
Rectangular pulse duration (t1)
Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
Document Number: 93001 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GB100DA60UP.PDF ] | |
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