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Número de pieza | GA100TS60U | |
Descripción | IGBT | |
Fabricantes | International Rectifier | |
Logotipo | ||
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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL recognition pending
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD -50055B
GA100TS60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 100A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
100
200
200
200
±20
2500
320
170
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Typ.
—
—
0.1
—
—
200
Max.
0.38
0.70
—
4.0
3.0
—
Units
°C/W
N.m
g
1
4/24/2000
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
20000
16000
12000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
8000
4000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA100TS60U
20 VCC = 400V
I C = 66A
16
12
8
4
0
0 100 200 300 400 500
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
18 VCC = 360V
VGE = 15V
TJ = 21525°°CC
16 IC = 100A
14
12
10
8
10 20 30 40
RGRG,1G,aGteatRe eRseisitsatnacnece(O(Ωhm) )
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RGG1=1=5OΩh;mRG2 = 0 Ω
VGE = 15V
VCC = 360V
10
IC = 200 A
IC = 100 A
IC = 50 A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet GA100TS60U.PDF ] |
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