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PDF GT100DA60U Data sheet ( Hoja de datos )
| Número de pieza | GT100DA60U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay Siliconix | |
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GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
IF DC
600 V
100 A at 117 °C
1.72 V
100 A at 25 °C
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
VCES
IC (1)
ICM
ILM
IF
IFSM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 117 °C
TC = 25 °C
TC = 117 °C
Any terminal to case, t = 1 min
600
184
137
350
350
100
71
200
± 20
577
223
205
79
2500
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Document Number: 93185 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
GT100DA60U
Vishay Semiconductors
6
5
4
Eoff
3
2 Eon
1
0
0 10 20 30 40 50
93185_11
1000
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V
td(on)
td(off)
100 tf
tr
190
170
150
130 TJ = 125 °C
110
90
70 TJ = 25 °C
50
30
100
93185_13
1000
dIF/dt (A/μs)
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
30
25
20 TJ = 125 °C
15
10 TJ = 25 °C
5
10
0
10 20 30 40 50
93185_12
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V
1400
0
100
93185_14
1000
dIF/dt (A/μs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
1200
1000
800
TJ = 125 °C
600
400
TJ = 25 °C
200
0
100
1000
93185_15
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
Document Number: 93185 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GT100DA60U.PDF ] | |
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