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What is DMN2300UFD?

This electronic component, produced by the manufacturer "Diodes Incorporated", performs the same function as "20V N-CHANNEL ENHANCEMENT MODE MOSFET".


DMN2300UFD Datasheet PDF - Diodes Incorporated

Part Number DMN2300UFD
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes Incorporated 
Logo Diodes Incorporated Logo 


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A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on) Max
200mΩ @ VGS = 4.5V
260mΩ @ VGS = 2.5V
400mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V
ID max
TA = 25°C
(Notes 4)
1.73A
1.50A
1.27A
1.15A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Load switch
Features and Benefits
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
X1-DFN1212-3
Drain
Gate
Body
Diode
Top View
Bottom View
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Marking
KS2
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Gate
Protection
Diode
Source
Equivalent Circuit
Tape width (mm)
8
Pin-out Top view
Quantity per reel
3000
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
www.diodes.com
September 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/

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DMN2300UFD equivalent
www.DataSheet.co.kr
1.7
VGS = 2.5V
ID = 500mA
1.5
VGS = 4.5V
ID = 1.0A
1.3
VGS = 1.8V
ID = 100mA
1.1
VGS = 1.5V
0.9 ID = 50mA
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
1.2
A Product Line of
Diodes Incorporated
DMN2300UFD
0.6
0.5
VGS = 1.8V
0.4
VGS = 1.5V
ID = 50mA
ID = 100mA
0.3
0.2
VGS = 4.5V
0.1
VGS = 2.5V
ID = 1.0A
ID = 500mA
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 On-Resistance Variation with Temperature
2.0
1.0
0.8 ID = 1mA
0.6 ID = 250µA
0.4
0.2
1.6
1.2 TA = 25°C
0.8
0.4
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
1,000
TA = 125°C
100
10
TA = 85°C
TA = 25°C
TA = -55°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Diode Forward Voltage vs. Current
100,000
10,000
1,000
100
10
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
1
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Leakage Current
vs. Drain-Source Voltage
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
5 of 7
www.diodes.com
1
2 4 6 8 10 12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.15 Leakage Current vs. Gate-Source Voltage
September 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/


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