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What is 29F32G08C?

This electronic component, produced by the manufacturer "Micron", performs the same function as "NAND Flash Memory".


29F32G08C Datasheet PDF - Micron

Part Number 29F32G08C
Description NAND Flash Memory
Manufacturers Micron 
Logo Micron Logo 


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Micron Confidential and Proprietary
32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA,
MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB,
MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB,
MT29F128G08C[K/M]CBB, MT29F256G08CUCBB
Features
Open NAND Flash Interface (ONFI) 2.1-compliant1
Multiple-level cell (MLC) technology
Organization
Page size x8: 4320 bytes (4096 + 224 bytes)
Block size: 256 pages (1024K + 56K bytes)
Plane size: 2 planes x 2048 blocks per plane
Device size: 32Gb: 4096 blocks;
64Gb: 8192 blocks;
128Gb: 16,384 blocks;
256Gb: 32,768 blocks
Synchronous I/O performance
Up to synchronous timing mode 4
Clock rate: 12ns (DDR)
Read/write throughput per pin: 166 MT/s
Asynchronous I/O performance
Up to asynchronous timing mode 4
tRC/tWC: 25ns (MIN)
Array performance
Read page: 50µs (MAX)
Program page: 900µs (TYP)
Erase block: 3ms (TYP)
Operating Voltage Range
VCC: 2.7–3.6V
VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
Program cache
Read cache sequential
Read cache random
One-time programmable (OTP) mode
Multi-plane commands
Multi-LUN operations
Read unique ID
Copyback
First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 108).
RESET (FFh) required as first command after power-
on
Operation status byte provides software method for
detecting
Operation completion
Pass/fail condition
Write-protect status
Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
Data retention: 10 years
Endurance: 5000 PROGRAM/ERASE cycles
Operating temperature:
Commercial: 0°C to +70°C
Industrial (IT): –40ºC to +85ºC
Package
52-pad LGA
48-pin TSOP
100-ball BGA
Note: 1. The ONFI 2.1 specification is available at
www.onfi.org.
PDF: 09005aef836c9ded
Rev. F 12/09 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Datasheet pdf - http://www.DataSheet4U.net/

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29F32G08C equivalent
wwww..DDaattaaSShheeeet4t.Uco.n.kert
Micron Confidential and Proprietary
32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND
List of Tables
Table 1: Asynchronous and Synchronous Signal Definitions ............................................................................. 9
Table 2: Array Addressing for Logical Unit (LUN) ............................................................................................ 26
Table 3: Asynchronous Interface Mode Selection ........................................................................................... 27
Table 4: Synchronous Interface Mode Selection ............................................................................................. 37
Table 5: Command Set .................................................................................................................................. 48
Table 6: Read ID Parameters for Address 00h ................................................................................................. 53
Table 7: Read ID Parameters for Address 20h .................................................................................................. 53
Table 8: Feature Address Definitions .............................................................................................................. 54
Table 9: Feature Address 01h: Timing Mode ................................................................................................... 56
Table 10: Feature Addresses 10h and 80h: Programmable Output Drive Strength ............................................. 56
Table 11: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ..................................................... 57
Table 12: Feature Addresses 90h: Array Operation Mode ................................................................................. 57
Table 13: Parameter Page Data Structure ....................................................................................................... 60
Table 14: Status Register Definition ............................................................................................................... 72
Table 15: OTP Area Details ........................................................................................................................... 103
Table 16: Error Management Details ............................................................................................................. 108
Table 17: Output Drive Strength Test Conditions (VCCQ = 1.7–1.95V) .............................................................. 109
Table 18: Output Drive Strength Impedance Values (VCCQ = 1.7–1.95V) .......................................................... 109
Table 19: Output Drive Strength Conditions (VCCQ = 2.7–3.6V) ....................................................................... 110
Table 20: Output Drive Strength Impedance Values (VCCQ = 2.7–3.6V) ............................................................ 110
Table 21: Pull-Up and Pull-Down Output Impedance Mismatch .................................................................... 111
Table 22: Overshoot/Undershoot Parameters ................................................................................................ 112
Table 23: Test Conditions for Input Slew Rate ................................................................................................ 113
Table 24: Input Slew Rate (VCCQ = 1.7–1.95V) ................................................................................................. 113
Table 25: Input Slew Rate (VCCQ= 2.7–3.6V) ................................................................................................... 113
Table 26: Test Conditions for Output Slew Rate ............................................................................................. 114
Table 27: Output Slew Rate (VCCQ = 1.7–1.95V) .............................................................................................. 114
Table 28: Output Slew Rate (VCCQ = 2.7–3.6V) ................................................................................................ 114
Table 29: Absolute Maximum Ratings by Device ............................................................................................ 115
Table 30: Recommended Operating Conditions ............................................................................................ 115
Table 31: Valid Blocks per LUN ..................................................................................................................... 115
Table 32: Capacitance: 100-Ball BGA Package ................................................................................................ 116
Table 33: Capacitance: 48-Pin TSOP Package ................................................................................................ 116
Table 34: Capacitance: 52-Pad LGA Package .................................................................................................. 116
Table 35: Test Conditions ............................................................................................................................. 117
Table 36: DC Characteristics and Operating Conditions (Asynchronous Interface) .......................................... 117
Table 37: DC Characteristics and Operating Conditions (Synchronous Interface) ........................................... 118
Table 38: DC Characteristics and Operating Conditions (3.3V VCCQ) ............................................................... 118
Table 39: DC Characteristics and Operating Conditions (1.8V VCCQ) ............................................................... 119
Table 40: AC Characteristics: Asynchronous Command, Address, and Data .................................................... 119
Table 41: AC Characteristics: Synchronous Command, Address, and Data ...................................................... 121
Table 42: Array Characteristics ..................................................................................................................... 124
PDF: 09005aef836c9ded
Rev. F 12/09 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Datasheet pdf - http://www.DataSheet4U.net/


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1. - 32Gb, NNAND Flash Memory

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