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PDF 7N65C Data sheet ( Hoja de datos )
| Número de pieza | 7N65C | |
| Descripción | FQP7N65C | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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 1. 650V, N-Ch, MOSFET - FQP7N65C  Hay una vista previa y un enlace de descarga de 7N65C (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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FQP7N65C/FQPF7N65C
650V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP7N65C FQPF7N65C
650
7 7*
4.2 4.2 *
28 28 *
± 30
212
7
1.6
4.5
160 52
1.28 0.42
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP7N65C
0.78
0.5
62.5
FQPF7N65C
2.4
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Characteristics (Continued)
100
D =0.5
1 0 -1
0 .2
0 .1
0.0 5
0.0 2
0 .01
1 0 -2
sin g le p u lse
※ N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t)
F
T
= 0.78 ℃ /W M
a
C
ct
=
o r,
PD
MD*=Zt 1θ/
t2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W ave P ulse D u ra tio n [sec]
101
Figure 11. Transient Thermal Response Curve for FQP7N65C
100 D = 0 .5
0 .2
0.1
1 0 -1
0.0 5
0 .02
0.0 1
10 -2 s in g le p u ls e
※ Notes :
1.
2.
3.
ZDθu Jt
T JM
Cy(
-
t) = 2.4
F a c to r,
TC = PD
℃ /W
MD*=Zt 1θ/
Max
t2
JC
(
t
)
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W ave P ulse D u ra tio n [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 7N65C.PDF ] | |
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