Low frequency transistor (−20V,−5A)
2SB1412
zFeatures
1) Low VCE(sat).
VCE(sat) = −0.35V (Typ.)
(IC/IB = −4A / −0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure
Epitaxial planar type
PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3
EIAJ : SC-63
∗ Denotes hFE
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−20
Emitter-base voltage
VEBO
−6
Collector current
−5
IC
−10
Collector power
dissipation
2SB1412
PC
1
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=10ms
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W(Tc=25°C)
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
Transition frequency
hFE
fT
Output capacitance
∗ Measured using pulse current.
Cob
Min.
−30
−20
−6
−
−
−
82
−
−
Typ.
−
−
−
−
−
0.35
−
120
60
Max.
−
−
−
−0.5
−0.5
−1.0
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −5V
IC/IB= −4A/ −0.1A
VCE= −2V, IC= −0.5A
∗
∗
VCE= −6V, IE=50mA, f=100MHz
VCB= −20V, IE=0A, f=1MHz
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2009.12 - Rev.C
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