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2SB1412 Datasheet PDF - Rohm

Part Number 2SB1412
Description Low Frequency Transistor
Manufacturers Rohm 
Logo Rohm Logo 



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2SB1412 datasheet, circuit
Low frequency transistor (20V,5A)
2SB1412
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.35V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure
Epitaxial planar type
PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3
EIAJ : SC-63
Denotes hFE
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
5
IC
10
Collector power
dissipation
2SB1412
PC
1
10
Junction temperature
Tj
150
Storage temperature
Tstg
55 to 150
1 Single pulse, Pw=10ms
Unit
V
V
V
A(DC)
A(Pulse) 1
W
W(Tc=25°C)
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
Transition frequency
hFE
fT
Output capacitance
Measured using pulse current.
Cob
Min.
30
20
6
82
Typ.
0.35
120
60
Max.
0.5
0.5
1.0
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −5V
IC/IB= −4A/ 0.1A
VCE= −2V, IC= −0.5A
VCE= −6V, IE=50mA, f=100MHz
VCB= −20V, IE=0A, f=1MHz
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.C

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