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What is 2SK3549-01?

This electronic component, produced by the manufacturer "Fuji Electric", performs the same function as "N-CHANNEL SILICON POWER MOSFET".


2SK3549-01 Datasheet PDF - Fuji Electric

Part Number 2SK3549-01
Description N-CHANNEL SILICON POWER MOSFET
Manufacturers Fuji Electric 
Logo Fuji Electric Logo 


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2SK3549-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200401
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
11.6±0.2
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900 V
VDSX *5
900 V
Continuous drain current
ID
±10 A
Pulsed drain current
ID(puls]
±40 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
10
A
Maximum Avalanche Energy
EAS
*1
330
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.50
270
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=6.06mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph *2 Tch =<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 900V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V Tch=25°C
VDS=720V VGS=0V
VGS=±30V VDS=0V
ID=5A VGS=10V
Tch=125°C
ID=5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=5A
VGS=10V
RGS=10
VCC=450V
ID=10A
VGS=10V
L=6.06mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
Min. Typ. Max. Units
900
3.0
5.0
25
V
V
µA
250
100 nA
1.08 1.40
6 12
S
1250 1900
pF
160 240
12 18
26 39 ns
23 35
60 90
17 26
34.5 52
nC
5 7.5
12 18
10 A
0.90 1.50 V
3.1 µs
17.0 µC
Min. Typ.
Max. Units
0.463 °C/W
50.0 °C/W
1
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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
2SK3549-01The function is N-CHANNEL SILICON POWER MOSFET. Fuji ElectricFuji Electric

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