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What is H04N60?

This electronic component, produced by the manufacturer "Hi-Sincerity Mocroelectronics", performs the same function as "N-Channel Power Field Effect Transistor".


H04N60 Datasheet PDF - Hi-Sincerity Mocroelectronics

Part Number H04N60
Description N-Channel Power Field Effect Transistor
Manufacturers Hi-Sincerity Mocroelectronics 
Logo Hi-Sincerity Mocroelectronics Logo 


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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Absolute Maximum Ratings
H04N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H04N60 Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Derate above 25°C
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
4
16
±30
70
30
0.56
0.2
-55 to 150
250
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H04N60E, H04N60F
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net

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H04N60 equivalent
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
H04N60E, H04N60F
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 5/5
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net


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Featured Datasheets

Part NumberDescriptionMFRS
H04N60The function is N-Channel Power Field Effect Transistor. Hi-Sincerity MocroelectronicsHi-Sincerity Mocroelectronics

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