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PDF 80NF70 Data sheet ( Hoja de datos )
| Número de pieza | 80NF70 | |
| Descripción | STP80NF70 | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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 1. 68V, MOSFET ( PDF )  Hay una vista previa y un enlace de descarga de 80NF70 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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STP80NF70
N-channel 68 V, 0.0082 Ω, 98 A, TO-220
STripFET™ II Power MOSFET
Features
Type
STP80NF70
VDSS
68 V
RDS(on)
max
< 0.0098 Ω
ID
98 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
Application
■ Switching applications
Description
The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!" OR
'
3
3#
Table 1. Device summary
Order code
STP80NF70
Marking
80NF70
Package
TO-220
Packaging
Tube
June 2010
www.DataSheet4U.net
Doc ID 17610 Rev 1
1/13
www.st.com
13
1 page  
STP80NF70
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 25 V, TJ = 150 °C
Figure 15 on page 9
-
-
-
-
98 A
392 A
1.5 V
70 ns
160 nC
4.7 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 17610 Rev 1
5/13
5 Page 
STP80NF70
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min Typ
A 4.40
b 0.61
b1 1.14
c 0.48
D 15.25
D1 1.27
E 10
e 2.40
e1 4.95
F 1.23
H1 6.20
J1 2.40
L 13
L1 3.50
L20 16.40
L30 28.90
∅P 3.75
Q 2.65
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Doc ID 17610 Rev 1
0015988_Rev_S
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet 80NF70.PDF ] | |
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