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What is IKP15N60T?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IKP15N60T Datasheet PDF - Infineon Technologies

Part Number IKP15N60T
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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IKP15N60T
TRENCHSTOPSeries
q
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Pb-free lead plating; RoHS compliant
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP15N60T
VCE
600V
IC
15A
VCE(sat),Tj=25°C
1.5V
Tj,max Marking Code
175C
K15T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
600
26
23
45
45
26
23
45
20
5
130
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 11.05.2015

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IKP15N60T equivalent
IKP15N60T
TRENCHSTOPSeries
q
40A
35A
30A
V =20V
GE
15V
25A 13V
11V
20A
9V
15A 7V
10A
5A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A
35A
30A
V =20V
GE
15V
25A 13V
11V
20A 9V
15A 7V
10A
5A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
35A
30A
25A
20A
15A
10A
5A
T =175°C
J
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
I =30A
C
1.5V
1.0V
IC=15A
I =7.5A
C
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.5 11.05.2015


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Featured Datasheets

Part NumberDescriptionMFRS
IKP15N60TThe function is IGBT ( Insulated Gate Bipolar Transistor ). Infineon TechnologiesInfineon Technologies

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