|
|
PDF 2SA970 Data sheet ( Hoja de datos )
| Número de pieza | 2SA970 | |
| Descripción | TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SA970 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
2SA970
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
• Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA,
f = 1 kHz
• High DC current gain: hFE = 200~700
• High breakdown voltage: VCEO = −120 V
• Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−120
−120
−5
−100
−20
300
125
−55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −1 mA, IB = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
VBE
fT
Cob
NF
IC = −10 mA, IB = −1 mA
VCE = −6 V, IC = −2 mA
VCE = −6 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA, f = 10 Hz,
RG = 10 kΩ
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 10 kΩ
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 100 Ω
Min
⎯
⎯
−120
Typ.
⎯
⎯
⎯
Max
−0.1
−0.1
⎯
Unit
μA
μA
V
200 ⎯ 700
⎯ ⎯ −0.3 V
⎯ −0.65 ⎯
V
⎯ 100 ⎯ MHz
⎯ 4.0 ⎯ pF
⎯⎯
6
⎯ ⎯ 2 dB
⎯3⎯
Note: hFE classification GR: 200~400, BL: 350~700
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA970.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SA970 | TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
| 2SA970 | Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |  New Jersey Semiconductor |
| 2SA971 | Silicon POwer Transistors |  SavantIC |
| 2SA971 | POWER TRANSISTOR |  Inchange Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |