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PDF MDS150 Data sheet ( Hoja de datos )
| Número de pieza | MDS150 | |
| Descripción | Pulsed Avionics 1030 - 1090 MHz | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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MDS150
150 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
www.DaTtahSeheeMt4UD.nSe1t 50 is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The
transistor includes double input prematch and output prematch for broadband
performance. The device has gold thin-film metallization and diffused
ballasting in a hermetically sealed package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25C1
350 W
Maximum Voltage and Current
Collector to Emitter Voltage (BVces)
Emitter to Base Voltage (BVebo)
Peak Collector Current (Ic)
55 V
3.5 V
10 A
Maximum Temperatures
Storage Temperature
-65 to +150 C
Operating Junction Temperature
+200 C
ELECTRICAL CHARACTERISTICS @ 25C
SYMBOL
Pout
Pin
Pg
c
VSWR
Pd1
Trise1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
Rise Time
TEST CONDITIONS
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
FUNCTIONAL CHARACTERISTICS @ 25C
BVebo
BVces
BVcbo
hFE
jc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
DC – Current Gain
Thermal Resistance
Ie = 10 mA
Ic = 30 mA
Ic = 30 mA
Vce = 5V, Ic = 1 A
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 128, repeated every 6.4mS
REV B: MAY 2010
MIN
150
8.75
40
TYP
MAX
20
3:1
0.5
100
UNITS
W
W
dB
%
dB
nSec
3.5 V
55 V
55 V
10
0.5 C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MDS150.PDF ] | |
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