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PDF APT28GA60SD15 Data sheet ( Hoja de datos )
| Número de pieza | APT28GA60SD15 | |
| Descripción | High Speed PT IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APT28GA60BD15
APT28GA60SD15
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
www.DatgaSahteeetc4hUa.nregte and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
(B)
TO-247
G
C
E
D3PAK
(S)
C
GE
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Combi (IGBT and Diode)
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces
IC1
IC2
ICM
VGE
PD
SSOA
TJ, TSTG
TL
Collector Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Gate-Emitter Voltage 2
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
600
50
28
84
±30
222
84A @ 600V
-55 to 150
300
Unit
V
A
V
W
°C
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min Typ Max Unit
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
VGE = 15V,
TJ = 25°C
IC = 16A
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 600V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
600
3
2.0 2.5 V
1.9
4.5 6
275
3000
μA
±100
nA
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10000
1000
Cies
100
Coes
10
0
Cres
100 200 300 400 500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT28GA60BD_SD15
200
100
10
1
0.1
1
10 100 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.6
D = 0.9
0.5
0.7
0.4
0.3 0.5
Note:
0.2 0.3
t1
t2
0.1
0
10-5
0.1
0.05
10 -4
SINGLE PULSE
10 -3
10 -2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10 -1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT28GA60SD15.PDF ] | |
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