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What is IDD09E60?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "Fast Switching Emitter Controlled Diode".


IDD09E60 Datasheet PDF - Infineon Technologies

Part Number IDD09E60
Description Fast Switching Emitter Controlled Diode
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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Total 8 Pages



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No Preview Available ! IDD09E60 datasheet, circuit

Fast Switching Emitter Controlled Diode
Feature
600V Emitter Controlled technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175°C operating temperature
Easy paralleling
IDD09E60
Product Summary
VRRM
600
IF
VF
Tjmax
9
1.5
175
V
A
V
°C
PG-TO252-3
Type
IDD09E60
Package
PG-TO252-3
Ordering Code Marking Pin 1 PIN 2,4 PIN 3
-
D09E60 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
PPaararmameteerter
SymSybmobl ol
RReeppeteittiviteivpeepakearekverersveevrosletagveoltage
CCoonntintiunoouussfofrowrawrad rcdurcreunrrt ent
VRRVMR R M
IF
TTCC==2255°CC
TTCC==9900°CC
SSuurgregenonnornepreetpitievteitfiovrewfaordrwcaurrrdencturrent
TMTCaC=x=i2m255u°mCC,,rtetppp==e1t01it0imvems,fsos,rinswienaerhdahlcfawulfrawrveaenvte
TMC a=x2im5Cum, tprleimpietetditibvyetjf,moarxw, Dar=d0c.5urrent
PToCw=e2r5d°Cis,stippalitmiointed by Tjmax, D=0.5
TPCo=w2e5rCdissipation
TTCC==2950°CC
IF
IFSMI F S M
IFRMI F R M
PtotPt o t
OTpCe=r9a0ti°nCg junction temperature
Tj
SOtopraegraettienmgpaenradtusretorage temperature
SSooldldereinrgintgemtepmerpaeturraeture
1r.e6fmlomw(0s.o0l6d3eirnin.)gfr,oMmScLas3e for 10 s
Tj , TTssttgg
TS TS
VaVlualeue
606000
191.39.3
1313
4040
292.59.5
57.7
573.72.7
-3402.7+175
-55-5..5.+...1+71550
262060
UUnint it
VV
A
A
A
A
WW
°C°C
°C
Rev. 2.4
Page 1
2013­12­05

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IDD09E60 equivalent
IDD09E60
5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
350
ns
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR = 400V, Tj = 125 °C
800
nC
18A
700
250
18A 650
9A
4.5A
600
9A
200 550
500
150 4.5A
450
400
100
350
52000 300 400 500 600 700 800 A/µs 1000
diF/dt
7 Typ. reverse recovery current
Irr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
14
A
18A
12 9A
4.5A
11
302000 300 400 500 600 700 800 A/µs 1000
diF/dt
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
14
18A
10
9A
4.5A
10
8
9
6
8
74
6
2
5
2400 300 400 500 600 700 800 A/µs 1000
diF/dt
2000 300 400 500 600 700 800 A/µs 1000
diF/dt
Rev. 2.4
Page 5
2013­12­05


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IDD09E60 electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IDD09E60The function is Fast Switching Emitter Controlled Diode. Infineon TechnologiesInfineon Technologies

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