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Número de pieza | IDC08S120E | |
Descripción | Schottky Diode | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDC08S120E (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 1200V thinQ!TM SiC Schottky Diode
IDC08S120E
Features:
Applications:
• Revolutionary Semiconductor Material -
Silicon Carbide
• Motor Drives / Solar Inverters
• High Voltage CCM PFC
• Switching Behaviour Benchmark
• Switch Mode Power Supplies
• No Reverse Recovery / No Forward
Recovery
• High Voltage Multipliers
• Temperature Independent Switching
Behaviour
w• ww.QDautaaSlhifeieet4dU.Anectcording to JEDEC1) Based on
Target Applications
A
C
Chip Type
IDC08S120E
VBR
IF
Die Size
1200V 7.5A 2.012 x 2.012 mm2
Package
sawn on foil
Mechanical Parameters
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.012 x 2.012
1.476 x 1.476
mm2
4.05
362 µm
100 mm
1652
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
1 page IDC08S120E
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IDC08S120E.PDF ] |
Número de pieza | Descripción | Fabricantes |
IDC08S120E | Schottky Diode | Infineon Technologies |
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