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What is L558?

This electronic component, produced by the manufacturer "IXYS Corporation", performs the same function as "IGBT Module".


L558 Datasheet PDF - IXYS Corporation

Part Number L558
Description IGBT Module
Manufacturers IXYS Corporation 
Logo IXYS Corporation Logo 


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Total 5 Pages



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VWI 20-06P1
IGBT Module
Sixpack in ECO-PAC 2
I = 19 A
C25
VCES
= 600 V
VCE(sat) typ. = 1.9 V
Preliminary data
S 9 K 12
L9
N 9 X 18
NTC
N 5 R 5 W 14
J 13
A5
D5
H5
C 1 K 10
A1
F3
G1
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
VGE
=
±15
V;
R
G
=
82
;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = 720 V; VGE = ±15 V; RG = 82 ; TVJ = 125°C
non-repetitive
19
14
20
VCES
10
A
A
A
µs
TC = 25°C
73 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJH
I
C
=
10
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 0.35 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
V
GE
=
±15
V;
R
G
=
82
1.9 2.4 V
2.2 V
4.5 6.5 V
0.6 mA
2.7 mA
100 nA
35 ns
35 ns
230 ns
30 ns
0.4 mJ
0.3 mJ
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 300 V; VGE = 15 V; IC = 10 A
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
600 pF
39 nC
1.7 K/W
3.4 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
www.ixys.net
1-5
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670

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L558 equivalent
VWI 20-06P1
Diode
30
A
25
IF 20
15
10
5
T =150°C
VJ
T =100°C
VJ
T = 25°C
VJ
1.4
nC TVJ= 100°C
1.2 VR = 300V
Qr 1.0
0.8
0.6
IF= 20A
IF= 10A
IF= 5A
0.4
0.2
40
TVJ= 100°C
A VR = 300V
30
IRM
IF= 20A
20 IF= 10A
IF= 5A
10
0
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.0
100 A/µs 1000
-diF/dt
Reverse recovery charge Qr
versus -di /dt
F
120
ns
110
trr
100
90
TVJ= 100°C
VR = 300V
IF= 20A
IF= 10A
IF= 5A
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Peak reverse current IRM
versus -di /dt
F
20 1.2
V
VFR
15
tfr
V µs
FR
0.9
tfr
10 0.6
0.5
Qr
0.0
0
40 80 120 °C 160
TVJ
Dynamic parameters Qr, IRM
versus TVJ
80
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
5 0.3
TVJ= 100°C
IF = 10A
0
8-06A
0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
10 (ZthJH is measured using 50 µm
thermal grease)
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
1
Fred
ZthJH[K/W]
0.1
0.01
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10 100
t(s)
Transient thermal resistance junction to heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
5-5


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Featured Datasheets

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